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november 2011 doc id 18363 rev 2 1/14 14 STL24NM60N n-channel 600 v, 0.200 , 16 a powerflat? 8x8 hv mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STL24NM60N 650 v < 0.215 16 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0ower&,!4?x(6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging STL24NM60N 24nm60n powerflat? 8x8 hv tape and reel www.st.com
contents STL24NM60N 2/14 doc id 18363 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STL24NM60N electrical ratings doc id 18363 rev 2 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case drain current (continuous) at t c = 25 c 16 a i d (1) drain current (continuous) at t c = 100 c 10 a i d (2) 2. when mounted on fr-4 board of inch2, 2oz cu drain current (continuous) at t amb = 25 c 3.3 a i d (2) drain current (continuous) at t amb = 100 c 1.5 a i dm (2),(3) 3. pulse width limited by safe operating area drain current (pulsed) 13.2 a p tot (2) total dissipation at t amb = 25 c 3 w p tot (1) total dissipation at t c = 25 c 125 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 300 mj dv/dt (4) 4. i sd 16 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-amb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-amb max 45 c/w
electrical characteristics STL24NM60N 4/14 doc id 18363 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8 a 0.2 0.215 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1400 44 7.4 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0 to 480 v, v gs = 0 - 190 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 16 a, v gs = 10 v (see figure 3 ) - 46 7 23 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(off) t r t c t f turn-off delay time rise time cross time fall time v dd = 300 v, i d = 8 a, r g = 4.7 , v gs = 10 v (see figure 4 ) - 11.5 16.5 73 37 - ns ns ns ns
STL24NM60N electrical characteristics doc id 18363 rev 2 5/14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 16 64 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 16 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a, di/dt = 100 a/s v dd = 100 v (see figure 4 ) - 340 4.6 27 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 4 ) - 4.4 5.7 28 ns c a
test circuits STL24NM60N 6/14 doc id 18363 rev 2 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive waveform figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL24NM60N package mechanical data doc id 18363 rev 2 7/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL24NM60N 8/14 doc id 18363 rev 2 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 aaa 0.10 bbb 0.10 ccc 0.10
STL24NM60N package mechanical data doc id 18363 rev 2 9/14 figure 8. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e b a e2 d2 l 0.40 0.20 0.008 c bbb c a b b a aaa c aaa c a1 ccc c 8 222 8 71_rev_b
package mechanical data STL24NM60N 10/14 doc id 18363 rev 2 figure 9. powerflat? 8x8 hv recommended footprint (1) 1. all dimensions are in mm 7.30 1.05 2.00 7.70 4.40 0.60 footprint
STL24NM60N packaging mechanical data doc id 18363 rev 2 11/14 5 packaging mechanical data figure 10. powerflat? 8x8 hv tape figure 11. powerflat? 8x8 hv package orientation in carrier tape w (16.000. 3 ) e (1.750.1) f (7.500.1) a0 ( 8 . 3 00.1) p1 (12.000.1) p2 (2.00.1) p0 (4.00.1) d0 ( 1.550.05) d1 ( 1.5 min) t (0. 3 00.05) b0 ( 8 . 3 00.1) k0 (1.100.1) note: b as e a nd b u lk qua ntity 3 000 pc s 8 229 8 19_t a pe_reva
packaging mechanical data STL24NM60N 12/14 doc id 18363 rev 2 figure 12. powerflat? 8x8 hv reel 8 229 8 19_reel_reva
STL24NM60N revision history doc id 18363 rev 2 13/14 6 revision history table 9. document revision history date revision changes 05-jan-2011 1 first release. 10-nov-2011 2 section 4: package mechanical data has been updated. minor text changes.
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